FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET is a low on-resistance N-channel power MOSFET with low switching losses at 4.5 V and low on-resistance at 2.5 V. It is suitable for various applications such as lithium-ion battery packs.
This document is a datasheet for the Fairchild Semiconductor FDMA420NZ, a Single N-Channel 2.5V Specified PowerTrench MOSFET. The device is designed using Fairchild's advanced Power Trench process to optimize on-resistance and is packaged in a MicroFET 2x2 mm leadframe. It is suitable for applications such as Li-Ion battery packs.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +12 V |
| Continuous Drain Current | 5.7 A |
| Pulsed Drain Current | 24 A |
| Power Dissipation (Steady State) | 24 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 52 °C/W |
| On-Resistance (Typical) | 30 mΩ |
The maximum drain-source voltage is 20 V.
The junction temperature can range up to +150 °C.