The FDMB668P is an excellent low-voltage P-channel MOSFET with low RDS(on) for portable applications. It achieves an optimal balance among efficiency, thermal transfer and small form by integrating a P-channel MOSFET with minimized on-state resistance into a MicroFET 3x1.9 package. When optimizing the dimension of portable applications, this little device offers a very efficient solution.
The document describes the Fairchild Semiconductor FDMB668P, a P-Channel 1.8V Logic Level PowerTrench MOSFET designed for load switch and DC/DC conversion in portable applications such as HDDs, gaming devices, and notebooks.
Key features include an optimal balance of efficiency, thermal transfer, and small form factor within a MicroFET 3x1.9 package with a maximum height of 0.8mm. The device is RoHS compliant.
| Drain to Source Voltage (VDS) | -20 V |
|---|---|
| Gate to Source Voltage (VGS) | +8 V |
| Pulsed Drain Current | -40 A |
| Power Dissipation (Note 1a) | 1.9 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
The device supports a continuous drain current of -6.1 A.
The thin profile has a maximum height of 0.8mm.