The FDMC15N06 is an N-channel MOSFET power device with a drain-to-source voltage of 55V, a drain current of 15A, and an on-resistance of 0.090Ω. This device is manufactured using the innovative UItraFET process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is capable of withstanding high energy in avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. It is designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
This document is a datasheet for the Fairchild Semiconductor FDMC15N06, an N-Channel power MOSFET manufactured using the UltraFET process. The device is rated for 55V drain-to-source voltage and 15A continuous drain current, designed for high power efficiency in applications such as switching regulators, motor drivers, and power management circuits.
| Operating and Storage Temperature Range | -55 to +150 °C |
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| Package Type | MLP 3.3x3.3 |