FDG327N is a N-Channel MOSFET from Fairchild Corporation. It has a very low RDS(ON) and gate charge, making it ideal for use in small switching power supplies.
The document describes the Fairchild Semiconductor FDG327N, an N-Channel MOSFET optimized for use in small switching regulators. It features extremely low on-resistance (Ron) and gate charge (Qg), making it suitable for improving efficiency in DC/DC converters using synchronous or conventional switching PWM controllers.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current | 1.5 A |
| Pulsed Drain Current | 6 A |
| Power Dissipation (Single Operation) | 0.42 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 300 °C/W |
| Gate Charge (Typical) | 4.5 nC |
It is designed for DC/DC converters, power management, and load switch applications.
No, Fairchild's products are not authorized for use as critical components in life support devices without express written approval.