This document is a technical manual for Fairchild Semiconductor Corporation's FDG1024NZ Dual N-Channel Power Trench® MOSFET
The FDG1024NZ is a dual N-Channel logic level enhancement mode field effect transistor produced using Fairchild's proprietary, high cell density, DMOS technology. It is designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. The device features a very small SC70-6 package outline and is RoHS Compliant.
| Drain to Source Voltage | 20 V |
|---|---|
| Package Type | SC70-6 |
| Operating Junction Temperature Range | -55 to +150 °C |
The device supports a maximum continuous drain current of 1.2 A.
The maximum power dissipation is 0.36 W when the ambient temperature is 25 °C.
The device operates and stores within a range of -55 to +150 °C.