This document describes the features and characteristics of the FDG311N N-Channel MOSFET, which is produced using Fairchild Semiconductor's PowerTrench process. It has low on-state resistance and low gate charge, making it suitable for portable electronics applications.
The document is a datasheet for the FDG311N, an N-channel MOSFET produced using Fairchild Semiconductor's PowerTrench process. It features low on-state resistance and low gate charge, making it suitable for portable electronics applications such as load switches, power management, and DC/DC converters.
| Drain-Source Voltage (VDSS) | 20 V |
|---|---|
| Gate-Source Voltage (VGSS) | ±8 V |
| Continuous Drain Current (ID) | 1.9 A |
| Pulsed Drain Current (ID) | 6 A |
| Package Type | SC70-6 |
The device supports a continuous drain current of 1.9 A.
The maximum power dissipation for single operation is 0.75 W.
The device operates and stores within a range of -55 to +150 °C.