FDG315N is a N-channel logic level MOSFET produced by Fairchild Semiconductor with a maximum voltage of 30V and a maximum current of 2A. This device has extremely low on-state resistance and is suitable for low voltage and battery-powered applications.
The document describes the Fairchild Semiconductor FDG315N, an N-Channel Logic Level PowerTrench MOSFET designed for low voltage and battery-powered applications. It features a compact industry standard SC70-6 surface mount package and is optimized to minimize on-state resistance while maintaining superior switching performance.
Key electrical characteristics include a drain-source breakdown voltage of 30V, a continuous drain current of 2A, and an on-resistance (Rds(on)) of 0.12 Ohms at Vgs = 10V. The device is suitable for applications such as DC/DC converters, load switches, and power management circuits.
| Drain-Source Voltage (Vdss) | 30 V |
|---|---|
| Gate-Source Voltage (Vgss) | +20 V |
| Operating Junction Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage (Vgs(th)) | 1 to 3 V |
| Package Type | SC70-6 |
The device is well suited for DC/DC converters, load switches, and power management applications.
The maximum continuous drain current rating is 2 A.
Yes, it is an N-Channel Logic Level MOSFET tailored for low voltage and battery powered applications.