This document describes the features and characteristics of FDD8N50NZ N-Channel MOSFET, including a drain-to-source voltage of 500V, a drain current of 6.5A, and an on-state resistance of 0.85Ω.
The document describes the Fairchild FDD8N50NZ, an N-Channel enhancement mode power field effect transistor manufactured using Fairchild's proprietary planar stripe DMOS technology. The device is designed for high efficiency switching mode power supplies and active power factor correction applications.
Key electrical characteristics include a typical on-state resistance of 0.77 Ω at VGS = 10V, low gate charge (typical 14nC), and fast switching capabilities. The datasheet details maximum ratings such as a drain-to-source voltage of 500V and continuous drain current up to 6.5A. This manual is written in Chinese.
| Drain to Source Voltage (VDSS) | 500 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 6.5A |
| On-Resistance (Typical) | 0.77 Ω |
| Gate Charge (Typical) | 14nC |
| Reverse Transfer Capacitance (Typical) | 5pF |
| Operating Temperature Range | -55 to +150°C |
The typical on-state resistance (RDS(on)) is 0.77 Ω when VGS = 10V and ID = 3.25A.
Yes, the device is stated to be RoHS Compliant.