Fairchild FDD8882/FDU8882 N-Channel MOSFET Datasheet

FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET is a low on-resistance, high current handling N-channel MOSFET, designed specifically for DC/DC converters.


Fairchild FDD8882/FDU8882 N-Channel MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
429 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
3D21D58B60E1042768552EAE9D1DADCD

About this manual

This document is a technical datasheet for the FDD8882 and FDU8882 N-Channel PowerTrench MOSFETs manufactured by Fairchild Semiconductor. These devices are designed to improve efficiency in DC/DC converters using synchronous or conventional switching PWM controllers, featuring low gate charge and fast switching speeds.

What's inside

  • Features
  • Absolute Maximum Ratings
  • Electrical Characteristics
  • Dynamic Characteristics
  • Switching Characteristics
  • Thermal Characteristics
  • Test Circuits

Specifications

Drain to Source Voltage30 V
Continuous Drain Current (Tg = 25°C, Vgg = 10V)55 A
Power dissipation55 W
Operating and Storage Temperature-55 to 175 °C
Thermal Resistance Junction to Case (TO-252, TO-251)2.73 °C/W
Drain to Source On Resistance (Typical)0.0115 Ω
Total Gate Charge at 10V (Typical)22 nC

Frequently asked questions

What is the primary application for these MOSFETs?

They are designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

What is the maximum continuous drain current at 25°C with Vgg = 10V?

The maximum continuous drain current under these conditions is 55 A.

What are the available package types for this device?

The devices are available in TO-252AA and TO-251AA packages.

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