The document describes the features and characteristics of the FDG316P P-Channel Logic Level MOSFET product, which is produced using Fairchild Semiconductor's PowerTrench process. It has low on-state resistance and fast switching performance, making it suitable for low voltage and battery-powered applications.
The document describes the FDG316P, a P-Channel Logic Level MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining superior switching performance, making it well-suited for low voltage and battery-powered applications such as DC/DC converters, load switches, and power management circuits.
| Drain-Source Voltage (VDSS) | -30 V |
|---|---|
| Gate-Source Voltage (VGSS) | ±20 V |
| Continuous Drain Current (ID) | -1.6 A |
| On-Resistance @ VGS = -10V | 0.19 Ω |
| On-Resistance @ VGS = -4.5V | 0.30 Ω |
| Package Type | SC70-6 |
The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required, such as DC/DC converters, load switches, and power management.
The maximum continuous drain current (ID) is -1.6 A.
The static drain-source on-resistance (RDS(on)) is 0.30 Ω when VGS = -4.5 V.