FDD8782/FDU8782 N-Channel PowerTrench® MOSFET is a N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It has low gate charge, low rDS(on) and fast switching speed. It can be applied to Vcore DC-DC, VRM, etc.
The document describes the Fairchild Semiconductor FDD8782/FDU8782 N-Channel PowerTrench MOSFETs. These devices are designed to improve efficiency in DC/DC converters using synchronous or conventional switching PWM controllers. They feature low gate charge, low on-resistance (Rds(on)), and fast switching speeds.
| Drain to Source Voltage (Vds) | 25 V |
|---|---|
| Continuous Drain Current (Package Limited) | 35 A |
| On Resistance (Typical at Vgs=10V, Id=35A) | 11.0 mΩ |
| Operating and Storage Temperature Range | -55 to 175 °C |
| Thermal Resistance (Junction to Case) | 3.0 °CA/W |
The maximum power dissipation is 50 W.
The device operates and stores between -55 and 175 °C.