The FDG410NZ is a single N-channel power MOSFET with an extremely low rDS(on) and gate charge (Qg) that is optimized for use in small switching regulators, DC/DC converters, power management and load switches.
This document is a technical datasheet for the Fairchild Semiconductor FDG410NZ, a Single N-Channel PowerTrench MOSFET. The device is designed to improve efficiency in DC/DC converters and small switching regulators by providing extremely low on-resistance (rDS(on)) and gate charge.
| Continuous Drain Current | 2.2 A |
|---|---|
| Power Dissipation | 0.42 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction to Ambient) | 300 °C/W |
The device supports a maximum continuous drain current of 2.2 A.
The maximum power dissipation is 0.42 W when the junction temperature is 25 °C.
The device operates and stores within a junction temperature range of -55 to +150 °C.