FDG330P is a P-Channel 1.8V specified PowerTrench MOSFET produced by Fairchild Semiconductor Corporation. It has low gate charge and extremely low RDS(ON), which is suitable for battery management applications.
This document is a datasheet for the Fairchild Semiconductor FDG330P, a P-Channel MOSFET optimized for battery power management applications such as load switches. The device utilizes the company's advanced low voltage PowerTrench process and is available in a compact SC70-6 surface mount package.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical characteristics including on-resistance, gate charge, and switching times. It also includes thermal characteristics, safe operating area graphs, and trademark information.
| Drain-Source Voltage | -12 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Pulsed Drain Current | -6 A |
| Operating Junction Temperature | -55 to +150 °C |
| Package Type | SC70-6 |
| On-Resistance (Vgs = -4.5V) | 110 mΩ |
| On-Resistance (Vgs = -2.5V) | 150 mΩ |
| On-Resistance (Vgs = -1.8V) | 215 mΩ |
The device is optimized for battery power management applications, specifically as a load switch.
The maximum continuous drain current is -2 A.
The maximum gate-source voltage is +8 V.
The operating and storage junction temperature range is from -55 to +150 °C.