The FDG328P is a P-channel MOSFET produced by Fairchild Semiconductor. It features a 2.5V gate drive voltage, a maximum current of 1.5A and a maximum drain-source voltage of -20V. It uses Fairchild Semiconductor's advanced PowerTrench process, which provides low gate charge, high performance trench technology and a compact SC70-6 surface mount package.
This document is a technical datasheet for the Fairchild Semiconductor FDG328P, a P-channel MOSFET designed with the advanced PowerTrench process. It is optimized for power management applications such as load switches and DC/DC converters, supporting gate drive voltages from 2.5V to 12V.
The datasheet provides comprehensive electrical characteristics including off-state breakdown voltage, on-resistance, and switching parameters. It also details the device's thermal properties, maximum ratings for drain-source and gate-source voltages, and typical performance curves under various conditions.
| Drain-Source Voltage (Vdss) | -20 V |
|---|---|
| Gate-Source Voltage (Vgss) | +12 V |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is optimized for a wide range of gate drive voltages from 2.5V to 12V.
The FDG328P uses a compact industry standard SC70-6 surface mount package.