FDG6303N is a dual N-channel digital field-effect transistor with symmetrical pinouts and low voltage application characteristics.
The FDG6303N is produced using Fairchild's proprietary DMOS technology to minimize on-state resistance. It is specifically designed as a replacement for bipolar digital transistors and small signal MOSFETs in low voltage circuits, supporting operation down to 3V.
Key features include very low gate drive requirements, a Gate-Source Zener for ESD ruggedness exceeding 6kV, and availability in compact SC70-6 and SOT-223 packages. The device supports continuous drain currents of 0.5A with peak capabilities up to 1.5A.
| Drain-Source Voltage (Vss) | 25 V |
|---|---|
| Gate-Source Voltage (Vgs) | -0.5 to +8 V |
| Continuous Drain Current (Ic) | 0.5 A |
| Peak Drain Current | 1.5 A |
| Operating Temperature Range | -55 to +150 C |
| ESD Rating (Human Body Model) | >6kV |
| On-Resistance @ Vgs=4.5V, Id=0.5A | 0.34 to 0.45 Ohm |
The maximum continuous output current is 0.5 A.
Yes, it allows direct operation in 3 V circuits with a gate voltage less than 1.5 V.
The device has an Electrostatic Discharge Rating of greater than 6kV for the Human Body Model.