The FDG6332C is a 20V N & P-Channel PowerTrench MOSFETs produced by Fairchild Semiconductor Corporation, which has low gate charge and extremely low RDS(ON), suitable for DC/DC converter, load switch and other applications.
The FDG6332C is a 20V N & P-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. These devices are designed to offer exceptional power dissipation in a very small footprint, making them suitable for applications where larger packages like TSSOP-8 and SSOP-6 are impractical. The document provides comprehensive data for both N-Channel and P-Channel variants.
| Drain-Source Voltage | 20 V |
|---|---|
| Gate-Source Voltage | +12 / -12 V |
| Continuous Drain Current (N-Channel) | 0.7 A |
| Continuous Drain Current (P-Channel) | -0.6 A |
| Power Dissipation | 0.3 W |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 415 °C/W |
| Package Type | SOT-6 |
The device is designed for use in DC/DC converters, load switches, and LCD display inverters.
The SOT-6 package has a small footprint that is 51% smaller than SSOT-6 and a low profile of 1mm thick.
The operating and storage junction temperature range is from -55 to +150 °C.