FDG6322C is a dual N and P channel logic level enhancement mode field effect transistor produced by Fairchild. It has a very small package outline and low voltage drive requirements, allowing direct operation in 3V circuits. This device has been designed for use in place of bipolar digital transistors and small signal MOSFETs, and does not require bias resistors.
The FDG6322C is a dual N & P-Channel logic level enhancement mode field effect transistor produced using Fairchild's proprietary DMOS technology. Designed for low voltage applications, it serves as a replacement for bipolar digital transistors and small signal MOSFETs without requiring bias resistors. The device features a very small SC70-6 package outline and low gate drive requirements allowing direct operation in 3 V circuits.
| Drain-Source Voltage | 25 V (N-Ch), -25 V (P-Ch) |
|---|---|
| Continuous Drain Current | 0.22 A (N-Ch), -0.41 A (P-Ch) |
| Package Type | SC70-6 |
| Operating Temperature Range | -55 to 150 °C |
The device has very low level gate drive requirements allowing direct operation in 3 V circuits.
No, since bias resistors are not required, this dual digital FET can replace several different digital transistors.
The maximum power dissipation is 0.3 W.