FDG6321C is a logic level enhancement mode field effect transistor manufactured by Fairchild using Fairchild's proprietary high cell density DMOS technology. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS.
The FDG6321C is a dual N & P-Channel logic level enhancement mode field effect transistor produced using Fairchild's proprietary, high cell density, DMOS technology. It is designed for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs, eliminating the need for bias resistors. The device features a very small SC70-6 package outline and low gate drive requirements allowing direct operation in 3 V circuits.
| Continuous Drain Current (N-Channel) | 0.5 A |
|---|---|
| Operating and Storage Temperature Range | -55 to 150 °C |
The device uses a very small SC70-6 package outline.
Yes, it has very low level gate drive requirements allowing direct operation in 3 V circuits.
No, since bias resistors are not required, this dual digital FET can replace several different digital transistors.