FDG6317NZ is a dual N-channel MOSFET with extremely low RDS(ON), and it is suitable for applications such as DC/DC converters, power management and load switches.
The document describes the Fairchild Semiconductor FDG6317NZ, which is a dual N-Channel MOSFET optimized for use in small switching regulators. It features extremely low on-resistance and gate charge in an SC70-6 surface mount package. The device includes built-in Gate-Source Zener protection for ESD ruggedness.
| Drain-Source Voltage | 20 V |
|---|---|
| On-Resistance (Typical) | 400 mΩ @ Vgs = 4.5V |
| Package Type | SC70-6 |
The device supports a maximum continuous drain current of 0.7 A.
The power dissipation for single operation is rated at 0.3 W.
The device operates and stores within a range of -55 to +150 °C.