This document describes the features and characteristics of the FDG6316P P-Channel 1.8V MOSFET product produced by Fairchild Semiconductor Corporation in 2001. It is suitable for applications such as battery management and load switches.
The Fairchild Semiconductor FDG6316P is a P-Channel 1.8V specified MOSFET utilizing the company's advanced PowerTrench process. It is specifically optimized for battery power management applications, offering low gate charge and high performance trench technology for extremely low on-resistance (RDS(ON)).
The device is available in a compact industry standard SC70-6 surface mount package. Key features include a continuous drain current of -0.7 A and a drain-source breakdown voltage of -12 V. The pinouts are symmetrical, allowing pins 1 and 4 to be interchangeable.
| Drain-Source Voltage | -12 V |
|---|---|
| Gate-Source Voltage | ± 8 V |
| Continuous Drain Current | -0.7 A |
| Pulsed Drain Current | -1.8 A |
| Power Dissipation | 0.3 W |
| Operating Junction Temperature | -55 to +150 °C |
| Thermal Resistance Junction-to-Ambient | 415 °C/W |
| Package Type | SC70-6 |
| Static Drain-Source On-Resistance (Typ) | 270 mΩ |
It is optimized for battery power management applications.
Yes, the pinouts are symmetrical and pin 1 and pin 4 are interchangeable.
The maximum continuous drain current is -0.7 A.