FDG6335N is a 20V N-Channel PowerTrench MOSFET with an extremely low RDS(ON) and low QG, making it ideal for use in DC/DC converters, power management, and load switches.
The document describes the Fairchild Semiconductor FDG6335N, an N-Channel MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It is optimized for use in small switching regulators due to its extremely low RDS(ON) and gate charge (QG) within a compact SC70-6 surface mount package.
Key electrical characteristics include a drain-source breakdown voltage of 20V, a continuous drain current of 0.7A, and an on-resistance of 300 mΩ at VGS = 4.5V. The device features high-performance trench technology and is available in a dual package where pinouts are symmetrical.
| Drain-Source Voltage (VDSS) | 20 V |
|---|---|
| Gate-Source Voltage (VGSS) | ±12 V |
| Pulsed Drain Current (ID) | 2.1 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| On-Resistance @ VGS=4.5V (ID=0.7A) | 300 mΩ |
| On-Resistance @ VGS=2.5V (ID=0.6A) | 400 mΩ |
| Total Gate Charge (Qg) | 1.1 nC |
The device uses a compact industry standard SC70-6 surface mount package.
Yes, the pinouts are symmetrical; pin 1 and pin 4 are interchangeable.