FDD3N40 / FDU3N40 400V N-Channel MOSFET is a Fairchild N-channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It features low on-state resistance, fast switching, 100% avalanche tested and improved dv/dt capability.
This document provides technical specifications for the Fairchild Semiconductor FDD3N40 and FDU3N40, which are 2A, 400V N-Channel enhancement mode power MOSFETs. These devices utilize a proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance.
| Drain-Source Voltage | 400 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 2.0 A |
| Power Dissipation (Tg = 25°C) | 30 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The operating and storage temperature range is from -55 to +150 °C.