This document describes the features and characteristics of the FDD3N50NZ N-Channel MOSFET produced by Fairchild Semiconductor Corporation, such as low on-state resistance, low charge, fast switching, 100% avalanche tested, etc.
This document is a datasheet for the Fairchild Semiconductor FDD3N50NZ, an N-Channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. It is designed for applications such as high-efficiency switching mode power supplies and active power factor correction.
| Drain to Source Voltage | 500 V |
|---|---|
| Gate to Source Voltage | ±25 V |
| Continuous Drain Current (25°C) | 2.5 A |
| Power Dissipation (25°C) | 40 W |
| On-Resistance (Typical) | 2.1 Ω |
| Package Type | D-PAK |
The operating and storage temperature range is -55 to +150°C.
Yes, the device is RoHS compliant.
The typical total gate charge is 6.2 nC.