FDD6630A is a 30V N-Channel MOSFET with low gate charge, low RDS(ON) and fast switching speed. Applications include DC/DC converters and motor drives.
The FDD6630A is an N-Channel MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. It features low gate charge, low on-resistance, and fast switching speed. The device is optimized for high performance trench technology and is available in a TO-252 package.
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 21 A |
| Power Dissipation | 28 W |
| Operating Junction Temperature | -55 to +175 °C |
| On-Resistance (Vgs=10V) | 35 mΩ |
The maximum continuous drain current is 21 A.
The device supports a continuous drain current of 21 A and a pulsed drain current of 100 A.
The maximum power dissipation is rated at 28 W.