This document describes the features and characteristics of Fairchild Semiconductor Corporation's FDD5N53/FDU5N53 N-Channel MOSFET products, including low on-state resistance, low gate charge, and fast switching.
This document is a datasheet for the Fairchild Semiconductor FDD5N53 and FDU5N53 N-Channel enhancement mode power field effect transistors. These devices utilize the company's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance.
| Drain to Source Voltage | 530 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 4 A |
| Static Drain to Source On Resistance | 1.25 ohm (Typ.) |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction to Case | 1.4 °C/W |
| Package Types | D-PAK, I-PAK |
The maximum continuous drain current at 25°C is 4 A.
The typical static drain to source on resistance is 1.25 ohms.
The devices are available in D-PAK and I-PAK packages.