FDD5N50U is a N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It uses Fairchild's proprietary planar stripe DOMS technology, which has low RDS(on), low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and RoHS compliance.
This document is a datasheet for the Fairchild FDD5N50U N-Channel MOSFET, which utilizes the proprietary FRFET (Fairchild Rapid Field Effect Transistor) technology. The device is designed for high-efficiency switched mode power supplies and active power factor correction applications, offering low on-state resistance and fast switching characteristics.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (25°C) | 3A |
| On-Resistance | 1.65 Ω |
| Gate Charge | 11nC |
| Reverse Transfer Capacitance | 5pF |
| Package Type | D-PAK |
| Operating Temperature Range | -55 to +150°C |
The maximum continuous drain current at 25°C is 3A.
Yes, the datasheet states the device is RoHS compliant.
The typical on-resistance is 1.65 Ω at VGS = 10V and ID = 1.5A.