FDD6030L is a N-Channel MOSFET produced by Fairchild Semiconductor. It features low RDS(ON), low gate charge, and high switching speed.
The document describes the Fairchild Semiconductor FDD6030L, an N-Channel MOSFET produced using the PowerTrench process. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. Key applications include DC/DC converters and motor drives.
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current @Tj=25°C | 12 A |
| Pulsed Drain Current | 100 A |
| Power Dissipation @Tc=25°C | 56 W |
| Operating and Storage Junction Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction-to-Case | 2.7 °C/W |
| Thermal Resistance, Junction-to-Ambient (Note 1a) | 45 °C/W |
| Thermal Resistance, Junction-to-Ambient (Note 1b) | 96 °C/W |
| Static Drain-Source On-Resistance | 7.7 to 14.5 mΩ |
| Input Capacitance | 1230 pF |
| Output Capacitance | 325 pF |
| Reverse Transfer Capacitance | 150 pF |
| Total Gate Charge | 13 to 28 nC |
| Package Type | D-PAK (TO-252) |
The device is suitable for use in DC/DC converters and motor drives.
The maximum continuous drain current at a junction temperature of 25°C is 12 A.
The operating and storage junction temperature range is from -55 to +175 °C.
The thermal resistance from junction to case is 2.7 °C/W.