FDD5612 is a N-Channel PowerTrench MOSFET from Fairchild Semiconductor. It has a rated power of 18 A, 60 V, RDS(ON) of 55 mΩ@VGS = 10 V, and 64 mΩ@VGS = 6 V. This MOSFET is optimized for use in high frequency DC/DC converters. It has low gate charge and very fast switching speed.
The document describes the FDD5612, an N-Channel MOSFET designed to improve the efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Key features include a 18A continuous drain current, 60V drain-source voltage rating, and optimized low gate charge for high-frequency operation.
| Drain-Source Voltage | 60 V |
|---|---|
| Pulsed Drain Current | 100 A |
| Operating Junction Temperature | -55 to +175 °C |
The maximum drain-source voltage rating is 60 V.
The operating and storage junction temperature range is -55 to +175 °C.