The FDD5680 is an N-channel MOSFET produced by Fairchild Semiconductor. It features low RDS(on), fast switching speed, and is used in DC/DC converters and motor drives.
The document describes the Fairchild Semiconductor FDD5680, an N-Channel MOSFET produced using the PowerTrench process. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. Key applications include DC/DC converters and motor drives.
The datasheet details absolute maximum ratings, electrical characteristics, and thermal properties. It specifies a maximum drain-source voltage of 60V and a continuous drain current of 38A. The device is available in a TO-252 package with a typical on-resistance of 0.021 Ω at Vgs = 10V.
| Drain-Source Voltage | 60 V |
|---|---|
| Gate-Source Voltage | +20 V |
| Maximum Drain Current - Pulsed | 100 A |
| Operating Junction Temperature Range | -55 to +150 °C |
| On-Resistance (Typical) | 0.021 Ω |
| Gate Charge (Typical) | 33 nC |
The device is suitable for use in DC/DC converters and motor drives.
The typical on-state resistance is 0.021 Ω when the gate-source voltage is 10V.