This document is the technical manual for FDD5N60NZ N-Channel MOSFET. This device is a N-channel enhancement mode power field effect transistor, which is produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide faster switching speed and excellent dv/dt capability.
This document is a technical datasheet for the Fairchild Semiconductor FDD5N60NZ, an N-channel enhancement mode power field effect transistor. The device utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance.
Key specifications include a maximum drain-to-source voltage of 600V, a continuous drain current of 4.0A at 25°C, and a typical static drain-to-source on-resistance (RDS(on)) of 1.65Ω. The datasheet provides detailed electrical characteristics, thermal data, and typical performance graphs for applications such as high-efficiency switching mode power supplies.
| Drain to Source Voltage (VDSS) | 600 V |
|---|---|
| Gate to Source Voltage (VGSS) | ±25 V |
| Continuous Drain Current (TC = 25°C) | 4.0 A |
| Static Drain to Source On Resistance (Typ.) | 1.65 Ω |
| Total Gate Charge (Typ.) | 10 nC |
| Reverse Transfer Capacitance (Typ.) | 5 pF |
| Operating Temperature Range | -55 to +150°C |
The typical static drain-to-source on-resistance (RDS(on)) is 1.65Ω at VGS = 10V and ID = 2.0A.
The continuous drain current is 4.0A at TC = 25°C, with a pulsed rating of 16A.
Yes, the device is 100% avalanche tested.