This document describes the features and characteristics of Fairchild Semiconductor Corporation's FDD5N50 N-Channel MOSFET product, including maximum rated voltage, maximum rated current, low charge, fast switching, etc.
This document is a datasheet for the Fairchild FDD5N50 N-Channel MOSFET, produced using Fairchild's proprietary planar stripe, DMOS technology. The device is designed for high efficiency switched mode power supplies and active power factor correction applications. It features a 500V drain-to-source voltage rating, 4A continuous drain current, and a low on-state resistance of 1.4 Ω (maximum).
| Drain to Source Voltage | 500 V |
|---|---|
| Gate to Source Voltage | ±30 V |
| Continuous Drain Current (25°C) | 4A |
| On-Resistance (Typical) | 1.15 Ω |
| Operating Temperature Range | -55 to +150°C |
| Package Type | D-PAK |
The maximum continuous drain current is 4A at a case temperature of 25°C.
The typical on-state resistance is 1.15 Ω when VGS is 10V and ID is 2A.
Yes, the FDD5N50 N-Channel MOSFET is RoHS compliant.