This document describes the FDD8424H Dual N & P-Channel PowerTrench® MOSFET from Fairchild Semiconductor Corporation. The N-Channel features include a maximum rDS(on) of 24mΩ at VGS = 10V, ID = 9.0A and a maximum rDS(on) of 30mΩ at VGS = 4.5V, ID = 7.0A. The P-Channel features include a maximum rDS(on) of 54mΩ at VGS = -10V, ID = -6.5A and a maximum rDS(on) of 70mΩ at VGS = -4.5V, ID = -5.6A. Additionally, this MOSFET offers fast switching speed and is RoHS compliant.
The FDD8424H is a dual N and P-Channel enhancement mode PowerTrench MOSFET produced by Fairchild Semiconductor. It utilizes an advanced process designed to minimize on-state resistance while maintaining superior switching performance. The device is available in a Dual DPAK package and is RoHS Compliant.
| Drain to Source Voltage (N-Channel) | 40 V |
|---|---|
| Drain to Source Voltage (P-Channel) | -40 V |
| Continuous Drain Current (N-Channel) | 20 A |
| Continuous Drain Current (P-Channel) | -20 A |
| On-Resistance (N-Channel) | 24 mQ |
| On-Resistance (P-Channel) | 54 mQ |
| Operating Junction Temperature Range | -55 to +150 °C |
| Package Type | TO-252-4L |
The maximum continuous drain current for the N-Channel is 20 A.
Yes, the document lists the device as RoHS Compliant.
The device marking is FDD8424H.