FDD7N60NZ / FDU7N60NZ N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It has RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 2.75A, low gate charge ( Typ. 13nC), low Crss ( Typ. 7pF), fast switching, 100% avalanche tested, improved dv/dt capability, improved ESD capability, RoHS compliant and other features.
This document is a technical datasheet for the Fairchild FDD7N60NZ and FDU7N60NZ N-Channel enhancement mode power field effect transistors. These devices utilize Fairchild's proprietary UniFET-II DMOS technology, designed for high efficiency switching mode power supplies and active power factor correction applications. Key features include low gate charge, low on-state resistance, and 100% avalanche testing.
The device supports a maximum continuous drain current of 5.5 A when the case temperature is 25°C.
The maximum power dissipation is rated at 20 W when the case temperature is 25°C.