This document describes the features and characteristics of the FDD6690A 30V N-Channel PowerTrench MOSFET produced by Fairchild Semiconductor. It utilizes the advanced PowerTrench process to minimize on-state resistance and maintain low gate charge for superior switching performance.
The FDD6690A is an N-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. The device is available in the D-PAK (TO-252) package.
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current @Tc=25°C | 46 A |
| Power Dissipation @Tc=25°C | 56 W |
| Thermal Resistance, Junction-to-Case | 2.7 °C/W |
| Package Type | D-PAK (TO-252) |
The maximum continuous drain current is 46 A when the temperature is 25°C.
The maximum power dissipation is 56 W when the case temperature is 25°C.