FDD6N20 / FDU6N20 N-Channel MOSFET is a 200V, 4.5A, 0.8Ω MOSFET with low on-state resistance, low gate charge, low Crss, fast switching, 100% avalanche tested, improved dv/dt capability and RoHS compliance.
This document provides technical specifications for the Fairchild Semiconductor FDD6N20 and FDU6N20 N-Channel enhancement mode power field effect transistors. These devices utilize proprietary UniFET technology to minimize on-state resistance and provide superior switching performance, making them suitable for high-efficiency switched-mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tc = 25°C) | 4.5 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
The typical total gate charge at 10V is 4.7 nC.
Yes, the device is RoHS compliant.