FDD6778A N-Channel PowerTrench® MOSFET is an N-Channel MOSFET with the features of low gate charge, low RDS(on) and fast switching speed. It can be used to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
The document describes the Fairchild Semiconductor FDD6778A, an N-Channel PowerTrench MOSFET designed to improve the efficiency of DC/DC converters. It is optimized for low gate charge, low forward voltage drop, and fast switching speed. The device is suitable for Vcore DC-DC applications in desktop computers and servers, as well as for intermediate bus architecture.
| Drain to Source Voltage | 25 V |
|---|---|
| Continuous Drain Current (Package limited) | 10 A |
| Continuous Drain Current (Silicon limited) | 30 A |
| Power Dissipation (Ta = 25°C) | 3.7 W |
| Operating and Storage Junction Temperature Range | -55 to +175 °C |
| Thermal Resistance, Junction to Case | 6.2 °C/W |
| Thermal Resistance, Junction to Ambient | 40 °C/W |
| Gate to Source Threshold Voltage (Typical) | 1.0 V |
| Static Drain to Source On Resistance (Typical) | 14 mΩ |
| Total Gate Charge (Typical) | 12 nC |
It is designed for Vcore DC-DC for Desktop Computers and Servers and VAM for Intermediate Bus Architecture.
Yes, the device is RoHS Compliant.
The device is available in the D-PAK (TO-252) package.