The FDD6770A N-Channel PowerTrench® MOSFET is a MOSFET device produced by Fairchild Semiconductor Corporation. It has a maximum rDS(on) of 4.0 mΩ, a maximum gate charge of 24 A, and is packaged in a TO-252 package. It is used in Vcore DC-DC for desktop computers and servers and VRM for Intermediate Bus Architecture.
The FDD6770A is a 25 V, 4.0 mΩ N-Channel PowerTrench® MOSFET optimized for low gate charge, low on-resistance (rDS(on)), and fast switching speed. It is specifically designed to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
| Drain to Source Voltage (VDS) | 25 V |
|---|---|
| Gate to Source Voltage (VGS) | ±20 V |
| Continuous Drain Current (Package limited) | 50 A |
| Continuous Drain Current (Silicon limited) | 97 A |
| Maximum rDS(on) at VGS=10V, ID=24A | 4.0 mΩ |
| Maximum rDS(on) at VGS=4.5V, ID=18.4A | 8.0 mΩ |
| Operating Junction Temperature Range | -55 to +175 °C |
It is designed for Vcore DC-DC for Desktop Computers and Servers, as well as VRM for Intermediate Bus Architecture.
Yes, the device is RoHS Compliant.