This document describes the features and characteristics of the FDD6N50F / FDU6N50F N-Channel MOSFET products produced by Fairchild Semiconductor Corporation, including low on-state resistance, low gate charge, fast switching speed, and high voltage withstand capability.
This document is a technical datasheet for the Fairchild Semiconductor FDD6N50F and FDU6N50F series of N-Channel enhancement mode power field effect transistors (MOSFETs). These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for applications such as high efficient switched mode power supplies and active power factor correction.
| Drain to Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 5.5 A |
| Total Gate Charge at 10V | Typ. 19.8 nC |
The operating and storage temperature range is from -55 to +150 °C.