FDD7N20/FDU7N20 is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse withstand capability, and is well suited for high efficient switched mode power supplies and active power factor correction.
This document provides technical specifications and performance characteristics for the FDD7N20 and FDU7N20 N-Channel MOSFETs. These devices utilize Fairchild's proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are designed for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain to Source Voltage | 200 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 5 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device supports a continuous drain current of 5 A at 25°C and reduces to 3 A when the case temperature reaches 100°C.
The component can withstand a single pulsed avalanche energy of up to 62.5 mJ.
The device operates and stores safely within a temperature range of -55 to +150 °C.