FDD7N25LZ 250V N-Channel MOSFET is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation. It uses Fairchild's proprietary planar stripe DMOS technology and has low on-state resistance, superior switching performance and fast recovery characteristics.
The document is a technical specification sheet for the Fairchild Semiconductor FDD7N25LZ UniFET N-Channel enhancement mode power field effect transistor. It utilizes proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance, making it suitable for high-efficiency switching mode power supplies and active power factor correction applications.
The datasheet details maximum ratings such as a drain-to-source voltage of 250V and continuous drain current up to 6.2A at 25°C. It includes comprehensive electrical characteristics tables covering off-state, on-state, dynamic, and switching parameters like gate charge and capacitance. Additionally, it presents typical performance graphs illustrating on-resistance variation with temperature and drain current, as well as breakdown voltage versus junction temperature.
| Drain to Source Voltage (V_DSS) | 250 V |
|---|---|
| Continuous Drain Current (I_D) | 6.2 A |
| Package Type | D-PAK |
| Gate Charge (Q_g) | Typ. 12 nC |
The device can withstand a single pulsed avalanche energy of up to 115 mJ.