FDD6N50/FDU6N50 500V N-Channel MOSFET is a high performance MOSFET produced by Fairchild. It features low on-state resistance, low gate charge, low Crss, fast switching and 100% avalanche tested.
The document describes the Fairchild FDD6N50/FDU6N50, a 500V N-Channel enhancement mode power field effect transistor produced using the company's proprietary UniFET technology. These devices are designed for high-efficiency switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 500 V |
|---|---|
| On-Resistance | 0.9 Ω @VGS = 10 V |
| Gate Charge (Typical) | 12.8 nC |
| Reverse Transfer Capacitance (Typical) | 9 pF |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance Junction-to-Case | 1.4 °C/W |
The maximum drain-source voltage is 500 V.
The typical on-resistance is 0.9 Ω at VGS = 10 V.