Fairchild Semiconductor FDD8444 N-Channel PowerTrench MOSFET Datasheet

The FDD8444 is an N-channel power MOSFET manufactured by Fairchild Semiconductor Corporation. It features a typical rDS(on) of 4mΩ, a typical Qg(10) of 89nC, low Miller charging and low Qrr body diode characteristics, and has passed AEC Q101 and RoHS certification. It can be applied to automotive engine control, powertrain management, solenoid and motor drivers, electronic transmissions, distributed power architectures and VRMs, and 12V systems as the main switch.


Fairchild Semiconductor FDD8444 N-Channel PowerTrench MOSFET Datasheet - cover page
Brand
Fairchild
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
310 KB
Published
11 July, 2012
Updated
30 September, 2023
MD5 checksum
61D26752AE619B6118B4A64E3409D1C7

About this manual

The document is a technical datasheet for the FDD8444, a 40V, 50A N-Channel PowerTrench MOSFET designed for automotive applications such as engine control and powertrain management. Key features include low on-resistance (5.2mΩ typical), low gate charge, and UIS capability.

What's inside

  • Features
  • Applications
  • Maximum Ratings
  • Thermal Characteristics
  • Electrical Characteristics
  • Switching Characteristics
  • Typical Characteristics
  • Package Marking
  • Product Status Definitions
  • Disclaimer

Specifications

Drain to Source Voltage40 V
Gate to Source Voltage+20 V
Continuous Drain Current50 A
On Resistance5.2 mΩ
Package TypeTO-252AA
Operating Temperature-55 to +175 °C

Frequently asked questions

What are the maximum operating voltage limits for this MOSFET?

The drain to source voltage is rated at a maximum of 40 V, and the gate to source voltage must not exceed +20 V.

What are the specified applications for this component?

This MOSFET is designed for automotive engine control, powertrain management, solenoid and motor drivers, and electronic transmission systems.

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