FDC637AN is a N-channel power transistor produced by Fairchild Semiconductor. It has a rated voltage of 2.5V and a maximum current of 6.2A. It uses the PowerTrench process and has low RDS(ON) and low gate charge.
The FDC637AN is a single N-Channel MOSFET produced using Fairchild Semiconductor's advanced PowerTrench process. It is designed to minimize on-state resistance while maintaining low gate charge for superior switching performance. The device is offered in a SuperSOT-6 package, which provides a small footprint and low profile compared to standard SO-8 and TSSOP-8 packages.
Key features include fast switching speed, low gate charge (10.5nC typical), and high performance trench technology. The device is suitable for applications such as DC/DC converters, load switches, and battery protection circuits. It operates with a specified gate voltage of 2.5V and supports a continuous drain current of 6.2A.
| Drain-Source Voltage | 20 V |
|---|---|
| Continuous Drain Current | 6.2 A |
| Pulsed Drain Current | 20 A |
| Power Dissipation | 1.6 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Ambient | 78 °C/W |
| Thermal Resistance, Junction-to-Case | 30 °C/W |
| Total Gate Charge | 10.5 nC |
The maximum continuous drain current is 6.2 A.
The maximum continuous drain current is 6.2 A.
The maximum drain-source voltage is 20 V.
The maximum power dissipation for single operation is 1.6 W.