FDC637BNZ N-Channel 2.5V Specified PowerTrench® MOSFET is a high-performance N-channel MOSFET that uses Fairchild Semiconductor's advanced PowerTrench® process to achieve extremely low on-resistance and low gate charge for superior switching performance. Compared to standard SO-8 and TSSOP-8 packages, this device offers a very small footprint and excellent power dissipation performance.
This document is a datasheet for the Fairchild Semiconductor FDC637BNZ, an N-Channel 2.5V Specified PowerTrench MOSFET. The device is designed for applications such as DC-DC conversion, load switching, and battery protection. It features a SuperSOT-6 package with a small footprint and low profile, offering high performance with low on-state resistance and fast switching speeds.
| Drain to Source Voltage | 20 V |
|---|---|
| Total Gate Charge | 8 nC (typical) |
| Package Type | SuperSOT-6 |
The device is designed for DC-DC conversion, load switch, and battery protection applications.
The maximum on-state resistance is 24mΩ at VGS = 4.5V and ID = 6.2A.