FDC6333C 30V N & P-Channel PowerTrench MOSFETs are produced by Fairchild Semiconductor Corporation using their advanced PowerTrench process. These devices feature extremely low RDS(ON) and superior switching performance. The SuperSOT-6 package is small and thin, making it ideal for applications where size and power dissipation are critical.
The FDC6333C is a dual N & P-Channel MOSFET produced using Fairchild Semiconductors advanced PowerTrench process. These devices are designed to offer exceptional power dissipation in a very small footprint, making them suitable for applications where larger packages like SO-8 and TSSOP-8 are impractical.
The document provides comprehensive electrical characteristics, including absolute maximum ratings, on and off characteristics, and dynamic parameters for both N-Channel and P-Channel sections. It also includes typical performance graphs for on-resistance, transfer characteristics, capacitance, and safe operating areas.
| Drain-Source Voltage | 30 V |
|---|---|
| Gate-Source Voltage | +/- 25 V |
| Continuous Drain Current (N-Channel) | 2.5 A |
| Continuous Drain Current (P-Channel) | 2.0 A |
| Package Type | SuperSOT-6 |
| Operating Junction Temperature Range | -55 to +150 °C |
The device is designed for use in DC/DC converters, load switches, and LCD display inverters.
The SuperSOT-6 package has a small footprint that is 72% smaller than an SO-8 package.
The maximum continuous drain current for the N-Channel section is 2.5 A.