This document describes a P-Channel 2.5V specified MOSFET that uses Fairchild's low voltage PowerTrench process and has been optimized for battery power management applications. The product features include: -3.5A, -20V drain-source current, with RDS(ON) of 80 mΩ @ VGS = -4.5V and 110 mΩ @ VGS = -2.5V; low gate charge (7.2 nC typical); high performance trench technology for extremely low RDS(ON).
This document is a datasheet for the Fairchild Semiconductor FDC634P, a P-Channel MOSFET utilizing the company's low voltage PowerTrench process. The device is specifically optimized for battery power management applications, including load switching and battery protection circuits.
The datasheet provides comprehensive electrical characteristics, including absolute maximum ratings, thermal characteristics, and typical performance curves. Key specifications include a drain-source voltage of -20V, a continuous drain current of -3.5A, and a low gate charge of 7.2 nC typical. It also details switching characteristics, capacitance values, and safe operating areas.
| Drain-Source Voltage | -20 V |
|---|---|
| Gate-Source Voltage | +8 V |
| Continuous Drain Current | -3.5 A |
| Maximum Power Dissipation | 1.6 W |
| Operating Junction Temperature | -55 to +150 °C |
| Thermal Resistance Junction-to-Ambient | 78 °C/W |
| Gate Charge | 7.2 nC typical |
| On-Resistance (Ves=-2.5V) | 82 mΩ |
The device is optimized for battery power management applications, specifically load switching and battery protection.
The continuous drain current rating is -3.5 A.
The typical gate charge is 7.2 nC.