This document describes a P-Channel 2.5V specified MOSFET that uses Fairchild's low voltage PowerTrench process and has been optimized for battery power management applications. The product features include: -3.5A, -20V drain-source current, with RDS(ON) of 80 mΩ @ VGS = -4.5V and 110 mΩ @ VGS = -2.5V; low gate charge (7.2 nC typical); high performance trench technology for extremely low RDS(ON).