2N7002K is a N-channel enhancement mode field-effect transistor from Fairchild Semiconductor Corporation, which has low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and ultra-small surface mount package.
This document is a technical datasheet for the Fairchild Semiconductor 2N7002K, an N-Channel Enhancement Mode Field Effect Transistor. The device features low on-resistance, fast switching speed, and ultra-small surface mount packaging in a SOT-23 form factor.
| Drain-Source Voltage (Vss) | 60 V |
|---|---|
| Gate-Source Voltage (Vess) | +20 V |
| Continuous Drain Current (Ib) | 300 mA |
| Operating Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (Pp) | 350 mW |
| Thermal Resistance, Junction to Ambient (Rea) | 350 °C/W |
| Input Capacitance (Ciss) | 50 pF |
Yes, the device is Pb Free/RoHS Compliant.
The typical ESD HBM rating is 3000V as per JESD22 A114.