2N7002W is an N-channel enhancement mode field effect transistor manufactured by Fairchild Semiconductor. The transistor features low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, and ultra-small surface mount package. It is RoHS compliant.
This document is a technical datasheet for the Fairchild Semiconductor 2N7002W, an N-channel enhancement mode field effect transistor. The device features low on-resistance, fast switching speed, and is available in an ultra-small surface mount SOT-323 package.
| Drain-Source Voltage | 60 V |
|---|---|
| Gate-Source Voltage (Continuous) | +20 V |
| Drain Current (Continuous @ 100°C) | 73 mA |
| Total Device Dissipation | 200 mW |
| Thermal Resistance (Junction to Ambient) | 625 °C/W |
The device supports a continuous drain current of 73 mA when the junction temperature reaches 100°C.
The absolute maximum rating for total device dissipation is 200 mW.