2N7002KW is an N-channel enhancement mode field effect transistor with features such as low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage, etc. The product is packaged in an ultra-small surface mount package and is Pb free/RoHS compliant.
This document is a technical datasheet for the Fairchild Semiconductor Corporation 2N7002KW, an N-Channel Enhancement Mode Field Effect Transistor. The device features low on-resistance, fast switching speed, and is available in an ultra-small SOT-323D surface mount package.
| Drain-Source Voltage (VDSS) | 60 V |
|---|---|
| Operating Junction Temperature Range | -55 to +150 °C |
| Total Device Dissipation (FR-4 PCB) | 300 mW |
| Thermal Resistance, Junction to Ambient | 410 °C/W |
| Package Type | SOT-323D |
Yes, the datasheet states it is Pb Free/RoHS Compliant.
The maximum drain-source voltage rating is 60 V.
The device operates within a junction temperature range of -55 to +150 °C.