2N7002V/VA is a N-channel enhancement mode field effect transistor. It has low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, low input/output leakage and other features.
This document is a technical datasheet for the Fairchild Semiconductor 2N7002V/VA, which consists of two N-Channel Enhancement Mode Field Effect Transistors in an ultra-small surface mount SOT-563F package. Key features include low on-resistance, fast switching speed, and lead-free design compliant with RoHS standards.
The datasheet provides absolute maximum ratings such as a drain-source voltage of 60V and continuous drain current of 280mA. It also details electrical characteristics including gate threshold voltage, static drain-source on-resistance, and input/output capacitance under various test conditions.
| Drain-Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (ID) | 280 mA |
| Junction and Storage Temperature Range | -55 to +150 °C |
| Total Device Dissipation (PD) | 250 mW |
| Thermal Resistance, Junction to Ambient (RθJA) | 500 °C/W |
| Package Type | SOT-563F |
Yes, the device is designed to be lead-free and RoHS compliant.
The absolute maximum rating for Drain-Source Voltage is 60 V.